40 n-channel enhancement mode field effect transistor surface mount package. absolute maximum ratings (t a =25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds v gate-source voltage v gs 20 v drain current-continuous @t j =25 c -pulsed i d 10 39 1.7 2.5 aa a w i dm drain-source diode forward current i s maximum power dissipation p d operating junction and storage temperature range t j , t stg -55 to 150 c thermal characteristics thermal resistance, junction-to-ambient r ja 50 /w c STM4470 a a a b samhop microelectronics corp. 1 product summary v dss i d r ds(on) ( m ) max 40v 10a 10 @ v gs = 10v 13 @ v gs = 4.5v features super high dense cell design for low r ds(on ). rugged and reliable. so-8 1 oct. 16. 2006 ver1.1 a d d green product
STM4470 electrical characteristics (t a 25 c unless otherwise noted) = parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d 250ua = 40 v zero gate voltage drain current i dss v ds 32v, v gs 0v = 1 ua gate-body leakage i gss v gs 20v, v ds 0v = na on characteristics b gate threshold voltage v gs(th) v ds v gs , i d = 250ua = 1 3 v drain-source on-state resistance r ds(on) v gs 10v, i d 10a 10 v gs 4.5v, i d 6a 13 on-state drain current i d(on) v ds = 10v, v gs = 10v 20 20 a s forward transconductance fs g v ds 10v, i d 10a dynamic characteristics c input capacitance c iss c rss c oss output capacitance reverse transfer capacitance v ds =20v, v gs = 0v f =1.0mh z 1020 p f 240 p f p f 135 switching characteristics c turn-on delay time rise time turn-off delay time t d(on) t t d(off) t v dd = 20v i d = 1a v gs = 10v r gen = 3.3 15 ns nsns ns 22 12 total gate charge gate-source charge gate-drain charge q g q gs q gd v ds =20v, i d = 10a v gs =10v 19.5 nc nc nc c fall time = = = = 2 5 8 11 48 2 5.5 1.7 m ohm m ohm ohm nc v ds =20v, i d = 10a,v gs =10v v ds =20v, i d = 10a,v gs =4.5v 9.8 100 = = d = =
STM4470 parameter symbol condition min typ max unit electrical characteristics (t a =25 c unless otherwise noted) c drain-source diode characteristics diode forward voltage v sd v gs = 0v, is =1.7a 0.73 1.2 v b notes figure 1. output characteristics figure 2. transfer characteristics v gs , gate-to-source voltage (v) v ds , drain-to-source voltage (v) i d , drain current (a) i d , drain current (a) 2015 10 5 0 0 0.5 1 1.5 2 2.5 3 3 25 c 20 16 12 8 4 0 0 125 c 0.6 3.6 3.0 2.4 1.8 1.2 vg s = 2. 5 v vg s=4 .5v v gs= 3v v gs= 8v figure 4. on-resistance variation with drain current and temperature on-resistance r ds(on) , normalized 1.751.60 1.45 1.30 1.15 1.0 0 0 25 50 125 tj( c) 100 75 v gs =10vi d =10a tj, junction temperature ( c) v gs =4.5vi d =6a i d , drain current (a) r ds(on) ( m ) 1615 12 96 3 1 figure 3. on-resistance vs. drain current and gate voltage 10 15 20 25 30 1 v g s =10v v gs =4.5v 150 25 30 5 vg s=1 0v c.g uaranteed by des ign, not s ubject to production tes ting. d.g uaranteed when external r g=3.3 ohm and tf < tf max b.p uls e tes t:p uls e width 300us , duty c ycle 2%. a.s urface mounted on f r 4 b oard, t 10s ec.
f igure 5. g ate t hres hold v ariation with t emperature f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hres hold v oltage b v ds s , normalized drain-s ource b reakdown v oltage t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) 4 s t m4470 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =250ua is , s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent v s d , b ody diode f orward v oltage (v ) 20.0 10.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 25 c 75 c 125 c v g s , g ate-s ource voltage (v ) r ds (on) ( m ) 36 30 24 18 12 6 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 2 4 6 8 10 0 25 c 125 c i d =10a 75 c
5 6 figure 11.switching characteristics rg, gate resistance ( ) switching time (ns) 100 10 1 1 6 10 60 100 60 600 300 600 v ds =20v ,id=1a v g s =10v t d ( o f f ) STM4470 figure 12. maximum safe operating area v ds , drain-source voltage (v) i d , drain current (a) 50 10 1 0.1 0.03 0.1 1 10 30 50 v gs =10v single pulse t a =25 c r ds (o n ) limit 10ms 10 0 ms 1s dc v gs , gate to source voltage (v) figure 10. gate charge qg, total gate charge (nc) 8 10 64 2 0 0 3 9 12 18 21 24 v ds =20v i d =10a 6 15 figure 9. capacitance v ds , drain-to source voltage (v) c, capacitance (pf) ciss coss 18001500 1200 900600 300 0 crss 0 5 10 15 20 25 30 t r t f t d ( o n ) 0.01 0.1 1 9 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance single pulse on p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a = p dm * r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05
pac k ag e out line dime ns ions s o-8 6 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45 s t m4470
so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.40 5.20 2.10 ? 1.5 (min) ? 1.5 + 0.1 - 0.0 12.0 2 0.3 1.75 5.5 2 0.05 8.0 4.0 2.0 2 0.05 0.3 2 0.05 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 s t m4470 7
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